Piezoresistive pressura sensoriissunt maxime secundum piezoresistive effectus. Piezoresistive effectus est usus describere mutationem in resistentia de materia sub mechanica stress.unlike in piezoelectric effectus, in piezoresistive effectus modo producit mutationem in impedimento, non electrica causam.
Piezoresistive effectus sunt in summa metallicis et semiconducting materials.among eos, in piezoresistive effectus in semiconductor materiae multo maior quam in metals.since, in accentus est, quod est in Mutare de Silicon, et ex accentus-related resistentia of the material itself, which makes its degree factor hundreds of times larger than that of metals.The resistance change of N-type silicon is mainly due to the redistribution of carriers between the conduction band valleys of different mobilities caused by the displacement of its three conduction band valley pairs, which in turn changes the mobility of electrons in different flow directions.The second is due to the change in equivalent mass from the change in the shape of the conduction band Valley.In P-Type Silicon, hic phaenomenon fit magis universa et etiam ducit ad equivalent molem mutatio et foraminis conversionem.
Piezoresistive pressura sensoriis plerumque connexa in Wheatstone pontem per leucs.usually non est externa pressura in sensitive core et pontem in libratum statu (nullus situ). When the sensor is pressurized, the chip resistance changes, and the bridge will lose its balance.If a constant current or voltage power supply is added to the bridge, the bridge will output a voltage signal corresponding to the pressure, so that the resistance change of the sensor is converted into a pressure signal output through the bridge.The bridge detects the change of the resistance value, and after amplification, it is converted into the corresponding current signal Per conversionem de voltage et current.The current signum est compensatur per non-linearibus disciplinam loop, id est a vexillum output signum 4-20 ma cum input intentione habens linearibus respondentem necessitudinem generatur.
Ut ad redigendum ad influentiam temperatus mutatio in resistentia valorem de core et amplio mensurae accurate, impressionem sensorem adoptat temperatus ultricies mensuras superiores esse excelsum campester technica Indicatores ut nulla pereffluamus, sensibilitatem, lineathity, et stabilitatem.
Post tempus: Apr-03-2022