In annis, mea patria sensorem technology est developing cursim et applicationem agros quoque expanding. Sicut maxime mature type of modern mensurae technology, novum technologiae, novum materiae et novum processus continue emergentes in agro pressura sensoriis.
A pressura sensorem est a fabrica solebat deprehendere pressura annuit et convertam eos in electrica annuit secundum quaedam praecepta. Est late in variis productio, industriae et aerospace Fields.with in subdivisio application agros, pressura mensurae in altus-temperatus et dura engine in pressura est magis et magis, cum in pressura, cum in CXX ° F). F) et deficient, unde in pressura mensura defectum. Ideo in caliditas pressura sensorem fit a valde magna research directionem.
Genus caliditas pressura sensoriis
According to the different materials used, high-temperature pressure sensors can be divided into polysilicon (Poly-Si) high-temperature pressure sensors, SiC high-temperature pressure sensors, SOI (silicon on insulator) high-temperature pressure sensors, SOS (silicon on sapphire) silicon-sapphire pressure sensors, optical fiber High temperature pressure sensor and other different types.Judging from the current development situation, the research status and Expectationes Soi summus temperatus pressura sensoriis sunt valde specimen. In his maxime inducit SOI caliditas pressura sensorem.
Soi altum temperatus pressura sensorem
In progressionem Soi summus temperatus pressura sensoriis maxime innititur in ortum ex Soi Materials.soi est Silicon in insulator, quod maxime refertur ad semiconductor materer in fabrica accumsan et in SEI et in insulating inter fabrica accumsan in mole et in Silicon, Et improves ad reliability de machinas additionem, ex summus temperatus est de Soi fabrica accumsan, quod fit idealis materiam parare summus temperatus pressura sensoriis.
In praesenti, Soi summus temperatus pressura sensorors sunt feliciter developed foris et operantes temperatus est -55 ~ CDLXXX ° C, in -55 ~ D ° C Soi Sensor Sensorem Sensorem Centre Civitatibus Foederatis Technology In Soi summus temperatus pressura sensorem succrevit per Gallicum Lethardo Institutum etiam habet operationem temperatus de magis quam CD ° C.drahent Research Institutions sunt etiam actively pressores sensoriis, ut Xi'an Jiaotong University, Tianjin University, ut Xi'an University. Insuper et Fatri Future Advanced Technology Research Institute of Fatri est etiam peragendos related Research opus, et current project est ingressus ad demonstrationem scaena.
Opus principium soi altum temperatus pressura sensorem
In principle, the SOI high temperature pressure sensor mainly utilizes the piezoresistive effect of single crystal silicon.When a force acts on the silicon crystal, the lattice of the crystal is deformed, which in turn leads to a change in the mobility of the carriers, resulting in a change in the resistivity of the silicon crystal.Four piezoresistors are etched in a specific direction on the SOI top device layer to form et wheatstone pontem ostensum est in Figura II (a); A pressura retro cavum est ethched in Soi substrati layer ad formare a pressura sensitivo structuram.
Figura II (a) Wheatstone pontem
Cum pressura-sensitivo structuram subiecta est aere pressura, resistentia Piezoresistor mutationes, quae in vicem causas in output intentione vot ad mutationem et pressura valorem et resistentia valorem interpellat et pressura valorem et resistentia inter se output intentione et resistentia valorem interpellatio et pressura est mensuram valorem inter se output intentione et resistentia valorem interpellatio et in Piezoresistor valorem et resistentia valorem interpellatorum interpellat et ad valorem et in PiezoreSister.
Fabrication processus Soi altum temperatus pressura sensorem
Praeparatio processus of Soi summus temperatus pressura sensorem involves plures mems processibus. Quidam clavis gradus breviter introduced hic intelligere processus sensorem, maxime comprehendo piezoresistor Praeparatio, metallum plumbum praeparatio, pressura-sensitivo film praeparatio et pressura, sensitivo film praeparatio et pressura.
Clavem ad praeparationem varistors mendacium in potestate doping concentration et optimization de subsequent etching coronam caligine processus; Metallum plumbum maxime serves ut nexum de Wheattone pontem; Praeparatio impressionem sensitivo film maxime innititur in profunda Silicon Etching processus; Et packaging de cavum solet variat fretus applicationem pressura sensorem,
Quia hodiernam commercialized summus temperatus pressura sensoriis non tam occursum pressure mensurae requisita specialis dura environments tormenta et caliditas in altum temperatus et facti sunt speciale materiae in altum-caliditas et facti sunt speciale materiae et in caliditas ad speciali sensoriis et facti sunt in caliditas, in speciali et facti sunt speciali sensoriis et in caliditas. Future Research in Soi summus temperatus pressura sensoriis ut focus in solvendo diu-term stabilitatem et sui calefacit problems de sensoriis in altum temperatus dura ambitus et improving in pressura sensoriis. aspectus.
Of course, the advent of the intelligent era also requires SOI high-temperature pressure sensors combined with other multidisciplinary technologies to bring more intelligent functions such as self-compensation, self-calibration, and information storage to the sensor, so as to better complete the mission of sensing complex high-temperature environmental pressure. .
Post tempus: Feb-13-2023